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Untitled Document

Using DELIF to measure pad/wafer contact during Chemical Mechanical Polishing

Investigator: Caprice Gray

Slide Show: Click here for an overview of this project.

Funding Sources: Intel Corporation, Cabot Microelectronics Corporation

Tufts CMP Homepage: http://www.tuftl.tufts.edu/CMPWebsite2/Public/index.htm

 

Goals:

The goal of this work is to image the slurry layer between the polishing pad and a wafer during chemical mechanical polishing (CMP).  At high image resolution the darkest pixels represent regions of pad-wafer contact. We can determine the percent pad-wafer contact by examining the dark extreme of the image histograms.

Outcomes:

The imaging area is 1.30x1.74 mm with a resolution of 2.5 ?m/pixel. At this magnification, some regions imaged contain contact, whereas others do not. For the contact regions discussed in this paper, contact percentage varies from 0.07% to 0.27% on a Cabot Microelectronics D100 polishing pad. The asperity contact area increases with applied load, which was varied from 0.28 to 3.1 psi.

 

Polishing Setup:

 

A Struers RotoPol-31 table top polisher unit was is fitted with a Mitsubishi Freqrol frequency modulator that allows the platen to rotate at speeds ranging from 20 rpm to 300 rpm. A simple aluminum shaft is driven by the same Dayton ˝ HP DC motor. The shaft system is support by 10 series 80/20 aluminum 2”X4” beams. A weighted lever arm is mounted on the top of the shaft to achieve variable applied wafer pressures.

 

For a complete description of the setup click here.

 

Optical Setup:

 

Standard silicon wafers can not be used for imaging because they are opaque.  Instead we use an optically transparent borosilicate glass disk (BK-7 glass).  For slurry imaging we use a technique called dual emission laser induced fluoresce (DELIF). Cab-O-Sperse SC-1 slurry from Cabot Microelectronics is mixed with a fluorescent dye, Calcien.  LabVIEW® software provides an interface through which Nd/YAG laser pulses and the cameras can be timed and controlled for slurry film imaging. The cameras were fitted with a Nikon EL-Nikkor zoom lens for high spatial resolution images.

 

 Results:

"Dual Emission Laser Induced Fluorescence in Chemical Mechanical Planarization", an unpublished review article of all work done before Fall 2003. (pdf)

"In-situ Friction and Pad Topography Measurements During CMP", Spring 2004 MRS Symposium paper. (pdf)

"Viewing Asperity Behavior Under the Wafer During Chemical Mechanical Polishing", Electrochemical and Solid-State Letters, 2005. (pdf)

"Instantaneous, High Resolution, In-situ Imaging of Slurry Film Thickness During CMP", CMP-MIC, February 22-25, 2005. (pdf)

"Measurement of Pad Compression During Chemical Mechanical Polishing", Thesis, May 2005. (pdf)

"Quantitative In-situ Measurement of Asperity Compression During Chemical Mechanical Planarization", WTC, September 13, 2005. (pdf)

"Asperity Size Distribution near Wafer Features during CMP", CMP-MIC, February 2006. (pdf)

"Detecting Pad-Wafer Contact during CMP using Dual Emission Laser Induced Fluorescence", Spring 2007 MRS Symposium paper. (pdf)

Related Work:

There are many university and industry programs that do research in the field of CMP. Tufts is a member of NSF/SRC Engineering Research Center for Environmentally Benighn Semiconductor Manufacturing in the Spring of 2005. Universities in the NSF/SRC are listed below:

University of Arizona

Massachusetts Institute of Technology
CMP Research Lab

University of California, Berkeley
CMP Labs: Doyle and Dornfeld

Stanford University

Arizona State University

Cornell University

University of Maryland

Some other labs with ongoing CMP research are listed below.

Georgia Institute of Technology

University College Dublin

The Pennsylvania State University

Clarkson University

Rensselear Polytechnic Institute
(Guttmann) and (Gill)