Using DELIF
to measure pad/wafer contact during Chemical Mechanical Polishing
Investigator: Caprice
Gray
Slide Show: Click here
for an overview of this project.
Funding Sources: Intel
Corporation, Cabot Microelectronics
Corporation
Tufts CMP Homepage:
http://www.tuftl.tufts.edu/CMPWebsite2/Public/index.htm
 |
Goals:
The goal of this work is to image the slurry layer between the polishing
pad and a wafer during chemical mechanical polishing (CMP). At high
image resolution the darkest pixels represent regions of pad-wafer contact.
We can determine the percent pad-wafer contact by examining the dark
extreme of the image histograms.
|
Outcomes:
The imaging area is 1.30x1.74 mm with a resolution of 2.5 ?m/pixel.
At this magnification, some regions imaged contain contact, whereas
others do not. For the contact regions discussed in this paper, contact
percentage varies from 0.07% to 0.27% on a Cabot Microelectronics D100
polishing pad. The asperity contact area increases with applied load,
which was varied from 0.28 to 3.1 psi. |
| Polishing Setup:
A
Struers RotoPol-31 table top polisher unit was is fitted with a Mitsubishi
Freqrol frequency modulator that allows the platen to rotate at speeds
ranging from 20 rpm to 300 rpm. A simple aluminum shaft is driven by
the same Dayton ˝ HP DC motor. The shaft system is support by 10 series
80/20 aluminum 2”X4” beams. A weighted lever arm is mounted on the top
of the shaft to achieve variable applied wafer pressures.
For a complete description of the setup click
here.
Optical Setup:
Standard silicon wafers can not be used for imaging because they are
opaque. Instead we use an optically transparent borosilicate glass
disk (BK-7 glass). For slurry imaging we use a technique called dual
emission laser induced fluoresce (DELIF).
Cab-O-Sperse SC-1 slurry from Cabot Microelectronics is mixed with a
fluorescent dye, Calcien. LabVIEW® software provides an interface through
which Nd/YAG laser pulses and the cameras can be timed and controlled
for slurry film imaging. The cameras were fitted with a Nikon EL-Nikkor
zoom lens for high spatial resolution images. |
Results:
"Dual Emission Laser Induced Fluorescence in Chemical
Mechanical Planarization", an unpublished review article of all work
done before Fall 2003. (pdf)
"In-situ Friction and Pad Topography Measurements During
CMP", Spring 2004 MRS Symposium paper.
(pdf)
"Viewing Asperity Behavior Under the Wafer During Chemical
Mechanical Polishing", Electrochemical and Solid-State Letters, 2005.
(pdf)
"Instantaneous, High Resolution, In-situ Imaging of Slurry
Film Thickness During CMP", CMP-MIC, February 22-25, 2005. (pdf)
"Measurement of Pad Compression During Chemical Mechanical
Polishing", Thesis, May 2005. (pdf)
"Quantitative In-situ Measurement of Asperity Compression
During Chemical Mechanical Planarization", WTC, September 13, 2005. (pdf)
"Asperity Size Distribution near Wafer Features during
CMP", CMP-MIC, February 2006. (pdf)
"Detecting Pad-Wafer Contact during CMP using Dual Emission
Laser Induced Fluorescence", Spring 2007 MRS Symposium paper. (pdf)
Related Work:
There are many university and industry programs that do research
in the field of CMP. Tufts is a member of NSF/SRC
Engineering Research Center for Environmentally Benighn Semiconductor Manufacturing
in the Spring of 2005. Universities in the NSF/SRC are listed below:
University of Arizona
Massachusetts Institute of Technology
CMP Research Lab
University of California,
Berkeley
CMP Labs: Doyle
and Dornfeld
Stanford University
Arizona State University
Cornell University
University of Maryland
Some other labs with ongoing CMP research are listed below.
Georgia
Institute of Technology
University College
Dublin
The
Pennsylvania State University
Clarkson
University
Rensselear Polytechnic Institute
(Guttmann)
and (Gill)